M366S0823CT0
M366S0823CT0 SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Sy...
M366S0823CT0
M366S0823CT0 SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823CT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823CT0 consists of eight
CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling
capacitors are mounted on the www.DataSheet4U.com printed circuit board in parallel for each SDRAM. The M366S0823CT0 is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURE
Performance range Part No. Max Freq. (Speed) M366S0823CT0-C80 125MHz (8ns @ CL=3) M366S0823CT0-C1H 100MHz (10ns @ CL=2) M366S0823CT0-C1L 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the ...