DatasheetsPDF.com

M312L2923BG0-A2 Datasheet

Part Number M312L2923BG0-A2
Manufacturers Samsung
Logo Samsung
Description DDR SDRAM Registered Module
Datasheet M312L2923BG0-A2 DatasheetM312L2923BG0-A2 Datasheet (PDF)

1GB, 2GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module (60FBGA) 184pin Registered Module based on 512Mb B-die (x4, x8) with 1,200mil Height & 72-bit ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 1GB, 2GB Registered DIMM Revision History Revision 1.0 (July, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo. DDR SDRAM Rev. 1.1 August. 2003 1GB, 2GB Registered DIMM 184Pin Registered DIMM based on 512Mb B-die FBGA (x4, x8) Ordering Information Part Number M312L.

  M312L2923BG0-A2   M312L2923BG0-A2






DDR SDRAM Registered Module

1GB, 2GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module (60FBGA) 184pin Registered Module based on 512Mb B-die (x4, x8) with 1,200mil Height & 72-bit ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 1GB, 2GB Registered DIMM Revision History Revision 1.0 (July, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo. DDR SDRAM Rev. 1.1 August. 2003 1GB, 2GB Registered DIMM 184Pin Registered DIMM based on 512Mb B-die FBGA (x4, x8) Ordering Information Part Number M312L2923BG0-CB3/A2/B0 M312L2920BG0-CB3/A2/B0 M312L5720BG0-CB3/A2/B0 Density 1GB 1GB 2GB Organization 128M x 72 128M x 72 256M x 72 DDR SDRAM Component Composition 64Mx8( K4H510838B) * 18EA 128Mx4( K4H510438B) * 18EA 128Mx4( K4H510438B) * 36EA Height 1,125mil 1,125mil 1,200mil Operating Frequencies B3(DDR333@CL=2.5) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP 133MHz 166MHz 2.5-3-3 A2(DDR266@CL=2) 133MHz 133MHz 2-3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3 Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • Programmable Read latency 2, 2.5 (clock) • Programmable Burst length (2, 4, 8) • Programmable Burst type (sequential & interleave) • Edge aligned data output, center aligned data input • Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh) • Serial presence detect with EEPROM SAMSU.


2005-05-02 : MN101C49K    MN101C49    C4900    D432-xxx    SDA01    SDA03    SDA04    SDA05    sda12    SDA2208-3   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)