SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2GZ47, SM2GZ47A, SM2J...
SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A
AC POWER CONTROL APPLICATIONS
Unit: mm
z IT (RMS) = 1A (Ta = 65°C without radiator) z Gate Trigger Current: IGT = 5mA Max. (TYPE “A”) z Repetitive Peak Off−State
Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT (RMS) = 2A (Tc = 110°C) z Isolation
Voltage: VISOL = 1500V (AC, t = 60s)
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off−State
Voltage and Repetitive Peak Reverse
Voltage
SM2GZ47 SM2GZ47A
SM2JZ47 SM2JZ47A
VDRM
400 600
V
R.M.S On−State
Tc = 110°C
2
Current
IT (RMS)
A
(Full Sine Waveform) Ta = 65°C
1
Peak One Cycle Surge On−State Current (Non−Repetitive)
ITSM
8 (50Hz) A
8.8 (60Hz)
I2t Limit Value
I2t
0.32
A2s
Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate
Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation
Voltage (AC, t = 1min.)
PGM
3
W
PG (AV)
0.3
W
VFGM
10
V
IGM
1.6
A
Tj
−40~125
°C
Tstg
−40~125
°C
VISOL
1500
V
JEDEC
―
JEITA
―
TOSHIBA
13-10H1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum...