M29W512GH7AN6E

512Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features Stacked device (two 256Mb die) Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 12V for fast program (optional) Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 80ns, 90ns Commands sensitive to MSB A24 (die selection) Fast program commands: 32-word (64-byte) write buffer Enhanced buffered program commands: 256-word Program time – 16µs per byte/word TYP – Single die program time: 10s with VPPH, 16s with- out VPPH Memory organization – Uniform blocks: 512 main blocks (2 x 256), 128KB or 64KW each Program/erase controller – Embedded byte/word program algorithms Program/erase suspend and resume capability – Read from any block during a PROGRAM SUSPEND operation – Read or program another block durin...