M29F800AT M29F800AB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10...
M29F800AT M29F800AB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY
VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 8µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main Blocks
1 44
s s
s
s
PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin
TSOP48 (N) 12 x 20mm
SO44 (M)
s
ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
Figure 1. Logic Diagram
s
TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby
19 A0-A18 W E G RP
VCC
s
15 DQ0-DQ14 DQ15A–1 M29F800AT M29F800AB BYTE RB
s
100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – M29F800AT Device Code: 00ECh – M29F800AB Device Code: 0058h
s
s
VSS
AI02198B
January 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M29F800AT, M29F800AB
Figure 2A. TSOP Connections
A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0
Figure 2B. SO Connections
12 13
M29F800A...