M29F016B

M29F016B 16 Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 8µs by Byte typical 44 s s s s 32 UNIFORM 64 Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin TSOP40 (N) 10 x 20mm SO44 (M) 1 s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s TEMPORARY BLOCK UNPROTECTION MODE UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby 21 A0-A20 W E G RP M29F016B RB 8 DQ0-DQ7 VCC s s s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: ADh s s VSS AI02964 March 2000 1/22 M29F016B Figure 2. TSOP Connections Figure 3. SO Connections NC RP A11 A10 A9 A8 A7 A6 A5 A4 NC NC A3 A2 A1 A0 DQ0 DQ1 DQ2 DQ3 VSS VSS 1 44 2 43 3 42 4 41 5 40 6 39 7 38 8 37 9 36 10 35 11 34 M29F016B 12 33 13 32 14 31 15 30 16 29 17 28 18 27 19 26 20 25 21 24 22 23 AI02965 A19 A18 A17 A16 A15 A14 A13 A12 E VCC NC RP A11 A10 A9 A8 A7 A6 A5 A4 1 40 A20 NC W G RB DQ7 DQ6 DQ5 DQ4 VCC VSS VSS DQ3 DQ2 DQ1 DQ0 A0 A1 A2 A3 10 11 M29F016B 31 30 20 21 AI02969 VCC E A12 A13 A14 A15 A16 A17 A18 A19 NC NC A20 NC W G RB DQ7 DQ6...