M29F010B
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE fo...
M29F010B
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY
VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte typical 8 UNIFORM 16 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits
PLCC32 (K) TSOP32 (N) 8 x 20mm
s s
s s
s
ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
32
s
UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming
1
PDIP32 (P)
s
LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 20h
A0-A16 W M29F010B E G 17 8 DQ0-DQ7 VCC
s
Figure 1. Logic Diagram
s
s
VSS
AI02735
July 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/20
M29F010B
Figure 2A. PLCC Connections Figure 2B. TSOP Connections
1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7
A11 A9 A8 A13 A14 NC W VCC NC A16 A15 A12 A7 A6 A5 A4
1
32
9
M29F010B
25
8 9
M29F010B
25 24
17 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6
16
17
AI02738
G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
A12 A15 A16 NC VCC W NC
AI02737
Figure 2C. PDIP Connections
Table 1. Signal Names
A0-A16...