256Mb: 3V Embedded Parallel NOR Flash Features
Micron Parallel NOR Flash Embedded Memory
M29DW256G X16 Multiple Bank, Pa...
256Mb: 3V Embedded Parallel NOR Flash Features
Micron Parallel NOR Flash Embedded Memory
M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash Memory
Features
Supply
voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 9V for fast program (optional)
Asynchronous random/page read – Page size: 8 words – Page access: 25ns, 30ns – Random access: 70ns, 80ns
Fast program commands: 32-word Enhanced buffered program commands: 256-word Program time
– 16µs per byte/word TYP – Chip program time: 10 s with VPPH and 16s with-
out VPPH Memory organization
– Quadruple bank memory array: 32Mb + 96Mb + 96Mb + 32Mb with parameter blocks at top and bottom
– Dual operation: program/erase in one bank while reading in any other bank
Program/erase controller – Embedded word program algorithms
Program/erase suspend and resume capability – Read from any block during a PROGRAM SUSPEND operation – Read or ...
