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M02N601D1

CITC

Silicon N-Channel Power MOSFET

M02N601D1 600V N-Channel General Purpose Switching Device Applications ■ Features • 600V, 2.0A, RDS(on) = maximum 5Ω@VG...


CITC

M02N601D1

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M02N601D1 600V N-Channel General Purpose Switching Device Applications ■ Features 600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V. 100% avalanche, EAS tested. Suffix "G" indicates Halogen-free part, ex.M02N601D1G. ■ Outline TO-251 0.264(6.7) 0.248(6.3) 0.205(5.2) 0.189(4.8) 0.060(1.52) 0.058(1.48) 0.098(2.5) 0.083(2.1) 0.024(0.6) 0.016(0.4) 0.193(4.9) 0.181(4.6) 0.217(5.52) 0.216(5.48) 0.583(14.80) 0.559(14.20) 0.209(5.3) 0.193(4.9) ■ Mechanical data Epoxy:UL94-V0 rated flame retardant Case : JEDEC TO-251 molded plastic body over passivated chip Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed. GDS 0.035(0.90) 0.020(0.50) 0.297(7.55) 0.293(7.45) 0.035(0.90) 0.020(0.50) 0.091(2.30)TYP. 0.031(0.80) 0.016(0.40) 0.026(0.65) 0.014(0.35) Drain Gate Source Dimensions in inches and (millimeters) ■ Maximum ratings Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive...




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