LY62L2568

® LY62L2568 Rev. 1.3 256K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Description Initial Issue Adding PKG type : 32 SOP Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Deleted L grade Added SL grade Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Revised VTERM to VT1 and VT2 Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Issue Date Jul.25.2004 Mar.3.2006 May.14.2007 Mar.30.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY62L2568 Rev. 1.3 256K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The LY62L2568 is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L2568 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY62L2568 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 45/55/70ns „ Low power consum...