®
LY62L20488
Rev. 0.3
2048K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Descript...
®
LY62L20488
Rev. 0.3
2048K X 8 BIT LOW POWER
CMOS SRAM
REVISION HISTORY
Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised the typo in page 1 Added SL grade Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Issue Date Jan.8.2007 Sep.17.2008 Mar.30.2009
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®
LY62L20488
Rev. 0.3
2048K X 8 BIT LOW POWER
CMOS SRAM
GENERAL DESCRIPTION
The LY62L20488 is a 16,777,216-bit low power
CMOS static random access memory organized as 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability
CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L20488 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY62L20488 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible
FEATURES
Fast access time : 55/70ns Low power consumption: Operating current : 45/30mA (TYP.) Standby current : 10μA (TYP.) LL-version 4μA (TYP.) SL-version Single 2.7V ...