LY62L12816

® LY62L12816 Rev. 1.2 128K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised Package Outline Dimension(TSOP-II) Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Added SL grade Deleted L grade Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Revised VTERM to VT1 and VT2 Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Issue Date Jul.25.2004 Apr.12.2007 Mar.30.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY62L12816 Rev. 1.2 128K X 16 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The LY62L12816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L12816 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY62L12816 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 45/55/70ns „ Low power consumption: Operating current : 23/20/18mA (TYP.) Standby current : 1μA (T...