LY6251216

® LY6251216 Rev. 0.4 512K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Added ISB Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Revised VDR Issue Date Oct.14.2007 Feb.1.2008 May.20.2009 Rev. 0.4 Sep.11.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY6251216 Rev. 0.4 512K X 16 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The LY6251216 is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6251216 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY6251216 operates from a single power supply of 4.5V ~ 5.5V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 55/70ns „ Low power consumption: Operating current : 45/30mA (TYP.) Standby current : 8μA (TYP.) LL-version „ Single 4.5V ~ 5.5V power supply „ All inputs and outputs TTL compatible „ Fully static operatio...