LY6212816

® LY6212816 Rev. 1.3 128K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Added -45 ns Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Deleted -35 ns Spec. Revised VDR Issue Date Sep.1.2007 Nov.9.2007 Apr.17.2009 Rev. 1.3 Sep.11.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY6212816 Rev. 1.3 128K X 16 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The LY6212816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6212816 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY6212816 operates from a single power supply of 4.5V ~ 5.5V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 45/55/70ns „ Low power consumption: Operating current : 45/40/30mA (TYP.) Standby current : 3μA (TYP.) „ Single 4.5V ~ 5.5V power supply „ All inputs and outputs TTL compatible „ Ful...