®
LY61L6416
Rev. 1.8
64K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 ...
®
LY61L6416
Rev. 1.8
64K X 16 BIT HIGH SPEED
CMOS SRAM
REVISION HISTORY
Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Description Initial Issue Deleted Icc1 Spec. Revised Truth Table Deleted Data Retention Waveform(2)(UB & LB controlled) Revised the typo in Page 1 Added PKG Type : 48-ball 6mm x 8mm TFBGA Revised Test Condition of ISB1/IDR Added I Grade Spec. Revised VTERM to VT1 and VT2 Added -20ns Spec. Added LL Spec. Revised Test Condition of ISB Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Issue Date Jul.25.2004 Sep.21.2004 Jun.20.2005 Feb.13.2006 Jun.13.2007 Feb.4.2008 Mar.31.2008 Aug.7.2008 Apr.17.2009
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Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0
®
LY61L6416
Rev. 1.8
64K X 16 BIT HIGH SPEED
CMOS SRAM
GENERAL DESCRIPTION
The LY61L6416 is a 1,048,576-bit low power
CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability
CMOS technology. Its standby current is stable within the range of operating temperature. The LY61L6416 is well designed for low power application, and particularly well suited for battery back-up non...
