®
LY61L1024
Rev. 2.2
128K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision Rev. 1.0 Rev. 1.1 Rev. 2.0 Rev. 2.1 ...
®
LY61L1024
Rev. 2.2
128K X 8 BIT HIGH SPEED
CMOS SRAM
REVISION HISTORY
Revision Rev. 1.0 Rev. 1.1 Rev. 2.0 Rev. 2.1 Rev.2.2 Description Initial Issue Delete Icc1 Spec. Adding -10ns Spec. Revised VTERM to VT1 and VT2 Revised Test Condition of ISB1/IDR Added LL Spec. Revised Test Condition of ICC/ISB Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Issue Date Jul.25.2004 Sep.21.2004 Aug.30.2005 Feb.2.2009 Feb.2.2009 Apr.17.2009
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Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0
®
LY61L1024
Rev. 2.2
128K X 8 BIT HIGH SPEED
CMOS SRAM
GENERAL DESCRIPTION
The LY61L1024 is a 1,048,576-bit low power
CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability
CMOS technology. Its standby current is stable within the range of operating temperature. The LY61L1024 is well designed for very high speed system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY61L1024 operates from a single power supply of 3.3V and all inputs and outputs are fully TTL compatible
FEATURES
Fast access time : 10/12/15ns Low power consumption: Operating cu...
