LTE-4238

www.DataSheet4U.com GaAlAs T-1 3/ 4 Standard 5 Infrared Emitting Diode LTE-4238/LTE-4238C/LTE-5238A/LTE-5238AC Features Selected to specific on-line intensity and radiant intensity ranges. High power out put. Mechanically and spectrally matched to the LTR-3208 series of phototransistor. Wavelength is 880nm. Package Dimensions LTE-4238/LTE-4238C Description The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of silicon phototransistor. ee DataSh DataSheet4U.com LTE-5238A/LTE-5238AC Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. DataSheet4U.com 10-26 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com Absolute Maximum Ratings at Ta =25 Parameter Power Dissipation Peak Forward Current(300pps, 10 Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm (.063 in.) from body] s pulse) Maximum Rating 150 2 100 5 -40 -55 260 to +85 to +100 for 5 Seconds Unit mW ...