LT1001A

LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B ØA 45° C DESCRIPTION: E ØD The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. F G H MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 200 mA 20 V 2.5 W @ TC = 50 C -65 °C to +200 °C -65 °C to +200 °C 70 °C/W O DIM A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .020 / 0.508 MINIMUM inches / mm MAXIMUM inches / mm .200 / 5.080 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600 1 = EMITTER 2 = BASE 3 = COLLECTOR(CASE) NONE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO hFE VCE(SAT) ft Ccb NF GUmax TA = 25 °C TEST CONDITIONS IC = 5.0 mA IC = 1.0 mA IE = 100 µA VCB = 10 V VCE = 5.0 V IC = 50 mA VCE = 14 V VCB = 10 V VCE = 8.0 V VCE = 14 V IC = 50 mA IC = 90 mA IC = 50 mA IB = 5.0 mA IC = 90 mA f = 300 MHz f = 1.0 MHz f = 300 MHz f = 300 MHz MINIMUM 20 40 3.5 TYPICAL MAXIMUM UNITS V V V 50 70 500 3.0 1.6 2.5 15 300 µA --mV GHz pF dB dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...