LS5912

LS5911 LS5912 LS5912C Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -25V -25V 50mA 500mW S1 D1 SS G1 1 2 3 4 IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET TO-71 BOTTOM VIEW TO-78 BOTTOM VIEW G1 D1 S1 SOT-23 TOP VIEW 1 2 3 6 5 4 gfs ≥ 4000µS 1 G1 D1 S1 2 3 5 6 S2 D2 G2 PDIP-A G1 D1 S1 2 3 5 6 S2 D2 G2 S2 D2 G2 1 7 1 7 PDIP-B 8 7 6 5 -65 to +150 °C -55 to +150 °C S1 D1 SS G1 1 2 3 4 G2 SS D2 S2 S1 D1 G1 NC 1 2 3 4 8 7 6 5 NC G2 D2 S2 SOIC-A 8 7 6 5 SOIC-B G2 SS D2 S2 S1 D1 G1 NC 1 2 3 4 8 7 6 5 NC G2 D2 S2 MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC TYP LS5911 MIN MAX LS5912 MIN MAX LS5912C MIN MAX UNIT CONDITIONS VGS1 − VGS2 ∆ VGS1 − VGS2 ∆T IDSS1 IDSS2 Differential Gate to Source Cutoff Voltage Differential Gate to Source Cutoff Voltage Change with Temperature Gate to Source Saturation Current Ratio Differential Gate Current Forward Transconductance Ratio2 Common Mode Rejection Ratio 85 10 20 0.95 1 20 0.95 1 0.95 0.95 15 40 1 20 1 0.95 0.95 40 40 1 20 1 mV µV/°C % nA % dB VDG = 10V, ID = ...