LS5907

LS5905 LS5906 LS5907 LS5908 LS5909 Linear Integrated Systems FEATURES LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF |∆VGS1-2 /∆T|= 5µV/°C max. IG = 150fA TYP. VP= 2V TYP. LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature -65° to +150°C +150°C D1 S1 G2 G1 3 5 S2 Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO -IG(f) -IG Drain to Source Voltage Gate Forward Current Gate Reverse Current 40V 10mA 10µA D1 2 D2 S1 G1 S2 6 D2 1 7 G2 Maximum Power Dissipation Device Dissipation @ Free Air - Total 22 X 20 MILS 40mW @ +125°C BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905 5 10 20 40 40 |∆VGS1-2 /∆T| max. Drift vs. Temperature |VGS1-2| max. -IGmax. -IGmax. -IGSSmax. -IGSSmax. SYMBOL BVGSS BVGGO Yfss Yfs |Yfs1-2/Yfs| IDSS |IDSS1-2/IDSS| VGS(off) or VP VGS IGGO Offset Voltage Operating High Temperature At Full Conduction High Temperature CHARACTERISTICS Breakdown Voltage Gate-to-Gate Breakdown TRANSCONDUCTANCE Full Conduction Typical Operation Mismatch DRAIN CURRENT Full Conduction Mismatch at Full Conduction GATE VOLTAGE Pinchoff Voltage Operating Range GATE CURRENT Gate-to-Gate Leakage 5 1 1 2 5 MIN. 40 40 70 50 -60 -0.6 --5 1 1 2 5 TYP. 60 -300 100 1 400 2 2 -1 10 1 1 2 5 MAX. --500 200 5 1000 5 4.5 4 -...