LRS1338A

LRS1338A Data Sheet FEATURES Flash memory and SRAM Stacked die chip scale package 48-pin TSOP (TSOP48-P-1014) plastic package Power supply: 2.7 V to 3.6 V Operating temperature: -40°C to +85°C Access time (MAX.): – Flash memory: 120 ns – SRAM: 85 ns Operating current (MAX.): – Flash memory – Read: 25 mA (tCYCLE = 200 ns) – Word write: 57 mA (F-VCC ≥ 3.0 V) – Block erase: 42 mA (F-VCC ≥ 3.0 V) – SRAM: 25 mA (tCYCLE = 200 ns) Standby current2 – Flash memory: 20 µA MAX. (F-CE ≥ F-VCC - 0.2 V, F-RP ≤ 0.2 V, F-VPP ≤ 0.2 V) – SRAM: – 40 µA MAX. (S-CE ≥ S-VCC - 0.2 V) – 0.6 µA TYP. (TA = 25°C, S-VCC = 3 V, S-CE ≥ S-VCC - 0.2 V) Fully static operation Three-state output NOTES: 1. Block erase and word write operations of flash memory with TA < -30°C are not supported. 2. Total standby current is the summation of flash’s memory standby current and SRAM’s one. Stacked Chip 8M Flash Memory and 2M SRAM PIN CONFIGURATION 48-PIN TSOP TOP VIEW S-A16/F-A15 S-A15/F-A14 S-A14/F-A13 S-A13/F-A12 S-A12/F-A11 S-A11/F-A10 S-A10/F-A9 S-A9/F-A8 S-OE F-WE F-RP F-VPP S-VCC F-WP F-A18 F-A17 S-A8/F-A7 S-A7/F-A6 S-A6/F-A5 S-A5/F-A4 S-A4/F-A3 S-A3/F-A2 S-A2/F-A1 S-A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 S-A17/F-A16 I/O15 I/O7 I/O14 S-CE I/O6 I/O13 I/O5 I/O12 I/O4 F-VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 S-WE I/O8 I/O0 F-OE GND F-CE S-A1/F-A0 DESCRIPTION The LRS1338A is a combination memor...