polyfet rf devices
LR401
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
polyfet rf devices
LR401
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.0 Watts Push - Pull Package Style LR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 230 Watts Junction to Case Thermal Resistance o 0.75 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate
Voltage 70 V Drain to Source
Voltage 70 V Gate to Source
Voltage 20 V
13.5 A
RF CHARACTERISTICS ( 130.0 WATTS OUTPUT )
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 14 55 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 0.40 A, Vds = 28.0 V, F = Idq = 0.40 A, Vds = 28.0 V, F =
500 MHz 500 MHz
η
VSWR
Relative Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown
Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback ...
