Filtronic
Solid State
FEATURES
LPV1500
1 W Power PHEMT
DRAIN DRAIN
• • • • • •
+31.5 dBm Typical Power at 18 GHz 8.5 ...
Filtronic
Solid State
FEATURES
LPV1500
1 W Power PHEMT
DRAIN DRAIN
+31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery
Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias
SOURCE GATE
DIE SIZE: 16.5 x 16.1 mils (420 x 410 µm) DIE THICKNESS: 3.0 mils (75 µm typ.) BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.)
DESCRIPTION AND APPLICATIONS
The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1V500 also features Si3N4 passivation and is available in a flanged ceramic package (P100). The LPV1500 features plated source thru-vias for improved performance. Typical applications include commercial and military high-performance power
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-
voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters. The LP1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
PERFORMANCE SPECIF...