LPT16ED

LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators Point-to-point radios Satellite communications Fiber optics, OC-192 and OC-768 Local Multipoint Distribution Systems, LMDS Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appropriate external passive components. The silicon germanium technology used in this device provides outstanding high-frequency performance combined with high thermal conductivity and superior reliability under harsh operating and storage conditions. A complete mechanical description of the transistor is available under SiGe Semiconductor Document 07MS001. Features Low 1/f noise: -142 dBc/Hz at 100 Hz offset Phase noise: -167 dBc/Hz at 100 kHz offset Output power up to +13 dBm Operation down to 1 volt, 2 mA Gold bump pads for wire bond or flip chip (for direct die attachment) Ordering Information Type LPT16ED Package Bare Die Remark Shipped in Waffle Pack Functional Block Diagram C B E 38-DST-01 Rev 2.3 Sept 5/02 1 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final Absolute Maximum Ratings Operation in excess of any one of Absolute Maximum Ratings may result in permanent damage. This is a high performa...