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LP2301ALT1G Datasheet

Part Number LP2301ALT1G
Manufacturers LRC
Logo LRC
Description P-Channel MOSFET
Datasheet LP2301ALT1G DatasheetLP2301ALT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC ● We declare that the material of product are Halogen Free.

  LP2301ALT1G   LP2301ALT1G






P-Channel MOSFET

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC ● We declare that the material of product are Halogen Free and compliance with RoHS requirements. Ordering Information Device LP2301ALT1G S-LP2301ALT1G LP2301ALT3G S-LP2301ALT3G Marking 01A 01A Shipping 3000/Tape& Reel 10000/Tape& Reel LP2301ALT1G S-LP2301ALT1G 3 1 2 SOT– 23 3 1 2 Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Tj=150℃)* Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ Thermal Resistance-Junction to Ambient* Symbol VDSS VGSS ID IDM PD TJ Tstg RθJA Limit -20 ±8 -2.0 -1.6 -10 0.7 0.45 -55 to 150 -55 to 150 Typical Maximum 100 175 e * The device mounted on 1in2 FR4 board with 2 oz copper Unit V V A A W ℃ ℃ ℃/W Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LP2301ALT1G , S-LP2301ALT1G ELECTRICAL CHARACTERISTICS Symbol Parameter Limit STATIC V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VSD Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leaka.


2016-05-01 : CBR1F-D020S    CBR1F-D040S    CBR1F-D060S    CBR1F-D080S    CBR1F-D100S    CBR2-D020S    CBR2-D040S    CBR2-D060S    CBR2-D080S    CBR2-D100S   


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