type)ce/
Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ911W8BRA
Hight Brig...
type)ce/
Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ911W8BRA
Hight Bright Surface Mounting Chip LED
3216 Type
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Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
PD 40 mW
Forward current
IF 10 mA
Pulse forward current *
IFP 40 mA
Reverse
voltage
VR 5
V
Operating ambient temperature
Topr –30 to +85 °C
Storage temperature
Tstg –40 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity * Reverse current Forward
voltage Peak emission wavelength Spectral half band width Note) *: Measurement tolerance: ±20%
IO IF = 5 mA IR VR = 5 V VF IF = 5 mA λP IF = 5 m...
