Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ808R83RA
Hight Bright Surface ...
Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ808R83RA
Hight Bright Surface Mounting Chip LED
SS Type
Forward current IF (mA) (planed maintMeaniantnRecelneaFattoinryvcpeweale/r,udDimcmisunacrioronuetsnntetiinnnItaFeunne(scidtmeiytAn)y(clp%u)e,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
PD 55
Forward current
IF 20
Pulse forward current *
IFP 100
Reverse
voltage
VR 4
Operating ambient temperature
Topr –25 to +85
Storage temperature
Tstg –40 to +100
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
mW mA mA V °C °C
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Luminous intensity *
IO IF = 10 mA
Reverse current
IR VR = 4 V
Forward
voltage
VF IF = 10 mA
Peak emission wavelength
λP IF = 10 mA
Spectral half band width
Δλ IF = ...
