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LN77L
GaAlAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN77L GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 18 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package 1.0 7.65±0.2 ø5.0±0.2 25.6±1.0 5.05±0....
Panasonic Semiconductor
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