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LMX2216

National Semiconductor

0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer

LMX2216 0 1 GHz to 2 0 GHz Low Noise Amplifier Mixer for RF Personal Communications August 1995 LMX2216 0 1 GHz to 2 0...


National Semiconductor

LMX2216

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Description
LMX2216 0 1 GHz to 2 0 GHz Low Noise Amplifier Mixer for RF Personal Communications August 1995 LMX2216 0 1 GHz to 2 0 GHz Low Noise Amplifier Mixer for RF Personal Communications General Description The LMX2216 is a monolithic integrated low noise amplifier (LNA) and mixer suitable as a first stage amplifier and downconverter for RF receiver applications The wideband operating capabilities of the LMX2216 allow it to function over frequencies from 0 1 GHz to 2 0 GHz It is fabricated using National Semiconductor’s ABiC IV BiCMOS process All input and output ports of the LMX2216 are single-ended The LNA input and output ports are designed to interface to a 50X system The Mixer input ports are matched to 50X The output port is matched to 200X The only external components required are DC blocking capacitors The balanced architecture of the LMX2216 maintains consistent operating parameters from unit to unit since it is implemented in a monolithic device This consistency provides manufacturers a significant advantage since tuning procedures often needed with discrete designs can be reduced or eliminated The low noise amplifier produces very flat gain over the entire operating range The doubly-balanced Gilbert-cell mixer provides good LO-RF isolation and cancellation of secondorder distortion products A power down feature is implemented on the LMX2216 that is especially useful for standby operation common in Time Division Multiple Access (TDMA) and Time Division Duplex (TDD) syste...




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