LMA116

Filtronic Solid State Features 4.5dB Typical Noise Figure 15dB Typical Gain 18dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-10GHz Frequency Bandwidth +8 Volts Single Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX1.62mm (.064”X.064”) Chip Thickness : 100µm 2 Pad Dimension : 100µm 2-10GHz MESFET Amplifier LMA116 Description The Filtronic LMA116 is a GaAs monolithic distributive amplifier which operates from 2 to 10GHz. This amplifier is self biased and four 450µm FETs are used to produce a typical gain of 15dB and a noise figure of 4.5dB. The LMA116 is suitable for gain block, low noise and driver amplifier applications. DC decoupled output RF port. Ground is provided to the circuitry through vias to the backside metallization. Electrical Specifications at Ta=25°C (VDD=+8.0V, Zin=Zout=50Ω) Limit Typ. 15 80 ±1 4.5 -10 -14 -40 15 125 ±1.5 5.5 Symbol BW S21 Ids ∆S21 NF RLin RLout S12 P-1dB Parameter Operating Bandwidth Small Signal Gain Drain Operating Current Small Signal Gain Flatness Noise Figure Input Return Loss Output Return Loss Reverse Isolation 1-dB Gain Compression Power Test Conditions VD=8V, VG=3.5V, Rs1=5Ω Min. 2 13 55 Max. 10 Units GHz dB mA dB dB dB dB dB dBm @ .5Idss -35 12.5 Absolute Maximum Ratings Symbol Vdd Idd Pin Pt Tch Tstg Tmax. Parameter/Conditions Drain Supply Voltage Total Drain Current RF Input Power Power Dissipation Operating Channel Temperature Storage Temperature Max. Assembly Temp. (1 mi...