LH28F008SA

LH28F008SA FEATURES 40-PIN TSOP 8M (1M × 8) Flash Memory TOP VIEW Very High-Performance Read – 85 ns Maximum Access Time A19 A18 A17 A16 A15 A14 A13 A12 CE VCC VPP PWD A11 A10 A9 A8 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 NC NC WE OE RY/BY DQ7 DQ6 DQ5 DQ4 VCC GND GND DQ3 DQ2 DQ1 DQ0 A0 A1 A2 A3 High-Density Symmetrically Blocked Architecture – Sixteen 64K Blocks Extended Cycling Capability – 100,000 Block Erase Cycles – 1.6 Million Block Erase Cycles per Chip Automated Byte Write and Block Erase – Command User Interface – Status Register System Performance Enhancements – RY  / » BY  » Status Output – Erase Suspend Capability Deep-Powerdown Mode – 0.20 µA ICC Typical SRAM-Compatible Write Interface Hardware Data Protection Feature – Erase/Write Lockout during Power Transitions 28F008SA-1 Independent Software Vendor Support – Microsoft Flash File System™ (FFS) Figure 1. 40-Pin TSOP Configuration ETOX™ Nonvolatile Flash Technology – 12 V Byte Write/Block Erase Industry Standard Packaging – 40-Pin 1.2 mm × 10 mm × 20 mm TSOP (Type I) Package – 44-Pin 600-mil SOP Package 1 LH28F008SA 8M (1M × 8) Flash Memory 44-PIN SOP VPP RP A11 A10 A9 A8 A7 A6 A5 A4 NC NC A3 A2 A1 A0 DQ0 DQ1 DQ2 DQ3 GND GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 VCC CE A12 A13 A14 A15 A16 A17 A18 A19 NC NC NC ...