LE25FV051T

Preliminary Specifications CMOS LSI LE25FV051T 512k (64k words × 8bits) Serial Flash EEPROM Features CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Operating Frequency: 10MHz Low Power Consumption Active Current (Read): 10 mA (Max.) Standby Current: 20 µA (Max.) Serial Peripheral Interface (S.P.I.) mode 0,3 High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Self-timed Erase and Programming Byte Programming: 35 µs (Max.) End of Write Detection: Status Register Read Hardware Data Protection Packages Available: MSOP8(225mil) Product Description The LE25FV051T is a 64K x 8 CMOS sector erase, byte programmable serial Flash EEPROM. The LE25FV051T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability compared with conventional approaches. The LE25FV051T erases and programs with a 3.3-volt only power supply. LE25FV051T conforms to Serial Peripheral Interface (S.P.I.). Featuring high performance programming, the LE25FV051T typically byte programs in 35 µs. The LE25FV051T typically sector (256 bytes) erases in 4ms. Both program and erase times can be optimized using interface feature such as Status Register to indicate the completion of the write cycle. To protect against an inadvertent write, the LE25FV051T has on chip hardware data pr...