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LD01N60
POWER FIELD EFFECT TRANSISTOR
FEATURES
Robust High Voltage Termination Avalanche ...
www.DataSheet4U.com
LD01N60
POWER FIELD EFFECT TRANSISTOR
FEATURES
Robust High
Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
GENERAL DESCRIPTION
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage-blocking capability without degrading performance over time. In addition, this advanced
MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected
voltage transients.
PIN CONFIGURATION SYMBOL
TO-220/TO-220FP
Top View
D
GATE
SOURCE
DRAIN
3 1 2
1 2
G
TO-220
1 2 3
TO-220FP
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current - Continuous - Pulsed Gate-to-Source
Voltage - Continue - Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃ (VDD = 100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25Ω) Thermal Resistance - Junction to Case - J...