LC35W256ET-10W

Ordering number : ENN6304 CMOS IC LC35W256EM, ET-10W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Control inputs include OE for fast memory access and CE for power saving and device selection. This makes these devices optimal for systems that require low power or battery backup, and makes memory expansion easy. The ultralow standby current allows these devices to be used with capacitor backup as well. Package Dimensions unit: mm 3187A-SOP28D [LC35W256EM-10W] 28 15 0.15 1 18.0 14 Features Supply voltage range: 2.7 to 3.6 V Access time: 100 ns (maximum) Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C) Operating temperature: –10 to +70°C Data retention voltage: 2.0 to 3.6 V All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC) Input/output shared function pins, 3-state output pins No clock required (fully static circuits) Package 28-pin SOP (450 mil) plastic package: LC35W256EM-10W 28-pin TSOP (8 × 13.4 mm) plastic package: LC35W256ET-10W 0.4 1.27 0.1 2.3 SANYO: SOP28D unit: mm 3221-TSOP28 (Type I) [LC35W256ET-10W] 21 8 11.8 1.27max 22 28 1 0.55 8.1 7 0.2 0.125 0.08 SANYO: TSOP28 (Type I) Any and all SANYO products described or contained herei...