LBC85XBDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors www.datasheet4u.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. LBC85XBDW1T1G 6 5 4 1 2 3 Device Marking: LBC856BDW1T1G= 3B LBC857BDW1T1G= 3F LBC857CDW1T1G= 3G LBC858BDW1T1G= 3K LBC858CDW1T1G = 3L MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc (4) (3) SOT-363 (2) (1) Q1 Q2 (5) (6) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR–5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW DEVICE MARKING See Table 3.0 RqJA TJ, Tstg 328 –55 to +150 mW/°C °C/W °C ORDERING INFORMATION Device LBC85XBDW1T1G LBC85XBDW1T3G Shipping 3000/Tape & Reel 10000/Tape & Reel 1/6 LESHAN RADIO COMPANY, LTD. www.datasheet4u.com LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, L BC858BDW1T1G, L BC858CDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) LBC856 Seri...