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L8550QLT1G Datasheet

Part Number L8550QLT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet L8550QLT1G DatasheetL8550QLT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8550PLT1G s-L8550PLT1G 85P 3000/Tape&Reel L8550PLT3G s-L8550PLT3G 85P 10000/Tape&Reel L8550QLT1G s-L8550QLT1G 1YD 3000/Tape&Reel.

  L8550QLT1G   L8550QLT1G






Part Number L8550QLT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet L8550QLT1G DatasheetL8550QLT1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Pb-Free Package is available. ORDERING INFORMATION Device Package L8550*LT1 SOT-23 L8550*LT1G (Pb-Free) SOT-23 Shipping 3000/Tape&Reel 3000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun THERMALCHARACTERISTICS V CEO V CBO V EBO IC 25 V 40 V 5V 800 mAdc Characteristic Symbol Max Unit Total Device Diss.

  L8550QLT1G   L8550QLT1G







General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8550PLT1G s-L8550PLT1G 85P 3000/Tape&Reel L8550PLT3G s-L8550PLT3G 85P 10000/Tape&Reel L8550QLT1G s-L8550QLT1G 1YD 3000/Tape&Reel L8550QLT3G L8550RLT1G s-L8550QLT3G s-L8550RLT1G 1YD 1YF 10000/Tape&Reel 3000/Tape&Reel L8550RLT3G s-L8550RLT3G 1YF 10000/Tape&Reel L8550SLT1G s-L8550SLT1G 1YH 3000/Tape&Reel L8550SLT3G s-L8550SLT3G 1YH 10000/Tape&Reel MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun Symbol V CEO V CBO V EBO IC Value -25 -40 -5 -800 Unit V V V mAdc THERMALCHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW /°C R θJA 556 °C/W PD 300 mW 2.4 mW /°C R θJA 417 °C/W T J , T stg -55 to +150 °C 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. L8550PLT1G Series S-L8550PLT1G Series 3 1 2 SOT– 23 CO.


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