LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE We declare that the material of product comp...
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550PLT1G
s-L8550PLT1G
85P
3000/Tape&Reel
L8550PLT3G
s-L8550PLT3G
85P
10000/Tape&Reel
L8550QLT1G
s-L8550QLT1G
1YD
3000/Tape&Reel
L8550QLT3G L8550RLT1G
s-L8550QLT3G s-L8550RLT1G
1YD 1YF
10000/Tape&Reel 3000/Tape&Reel
L8550RLT3G
s-L8550RLT3G
1YF
10000/Tape&Reel
L8550SLT1G
s-L8550SLT1G
1YH
3000/Tape&Reel
L8550SLT3G
s-L8550SLT3G
1YH
10000/Tape&Reel
MAXIMUM RATINGS Rating
Collector-Emitter
Voltage Collector-Base
voltage Emitter-base
Voltage Collector current-continuoun
Symbol V CEO V CBO V EBO IC
Value -25 -40 -5 -800
Unit V V V
mAdc
THERMALCHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol Max
Unit
PD
225 mW
1.8 mW /°C
R θJA
556 °C/W
PD
300 mW
2.4 mW /°C
R θJA
417 °C/W
T J , T stg -55 to +150 °C
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
L8550PLT1G Series
S-L8550PLT1G Series
3
1 2
SOT– 23
CO...