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L8550HSLT3G Datasheet

Part Number L8550HSLT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet L8550HSLT3G DatasheetL8550HSLT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8550HPLT1G s-L8550HPLT1G 1HB 3000/Tape&Reel.

  L8550HSLT3G   L8550HSLT3G






General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8550HPLT1G s-L8550HPLT1G 1HB 3000/Tape&Reel L8550HPLT3G L8550HQLT1G s-L8550HPLT3G s-L8550HQLT1G 1HB 1HD 10000/Tape&Reel 3000/Tape&Reel L8550HQLT3G L8550HRLT1G s-L8550HQLT3G s-L8550HRLT1G 1HD 1HF 10000/Tape&Reel 3000/Tape&Reel L8550HRLT3G L8550HSLT1G s-L8550HRLT3G s-L8550HSLT1G 1HF 1HH 10000/Tape&Reel 3000/Tape&Reel L8550HSLT3G s-L8550HSLT3G 1HH 10000/Tape&Reel L8550HPLT1G Series S-L8550HPLT1G Series 3 1 2 SOT–23 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Max -25 -40 -5 -1500 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C Symbol PD R θJ A PD Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance,Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. .


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