L8050HQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar type. ƽNPN complement: L8050H ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8050HPLT1G S-L8050HPLT1G 1HA 3000/Tape&Reel L8050HPLT3G S-L8050HPLT3G 1HA 10000/Tape&Reel L8050HQLT1G S-L8050HQLT1G 1HC 3000/Tape&Reel L8050HQLT3G S-L8050HQLT3G 1HC 10000/Tape&Reel L8050HRLT1G L8050HRLT3G L8050HSLT1G L8050HSLT3G S-L8050HRLT1G S-L8050HRLT3G S-L8050HSLT1G S-L8050HSLT3G 1HE 1HE 1HG 1HG 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol VCEO VCBO VEBO IC Max 25 40 5 1500 Unit V V V mAdc Symbol PD R θJ A PD R θJ A T j,T St g Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 -55 to +150 °C/W °C L8050HQLTIG Series S-L8050HQLTIG Se...