T-1 (3mm) INFRA-RED EMITTING DIODES
L34F3C L34SF4C L34F3BT L34SF4BT
Features
!MECHANICALLY AND SPECTRALLY MATCHED
Desc...
T-1 (3mm) INFRA-RED EMITTING DIODES
L34F3C L34SF4C L34F3BT L34SF4BT
Features
!MECHANICALLY AND SPECTRALLY MATCHED
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes.
TO THE L32P3C PHOTOTRANSISTOR.
!BOTH
WATER CLEAR LENS AND BLUE TRANSPARENT
LENS AVAILABLE HIGH POWER OUTPUT.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.
SPEC NO:CDA0542 APPROVED: J.LU
REV NO: V.1 CHECKED:
DATE: OCT/29/2001 DRAWN:X.Q.ZHENG
PAGE: 1 OF 4
Free Datasheet http://www.datasheet.in/
Selection Guide
Par t No . Dic e L en s Ty p e Po (m W/s r ) @20m A Min . L 3 4F 3 C L34F3BT L34SF4C L34SF4BT GaAs GaAs GaAlAs GaAlAs WATER CLEAR BLUE TRANSPARENT WATER CLEAR BLUE TRANSPARENT 2 2 2 2 Ty p . 10 5 10 4 Po (m W/s r ) @50m A Min . 5 8 5 8 Ty p . 20 20 20 20 V i ew i n g An g l e 2θ1/2 5 0° 5 0° 5 0° 5 0°
Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
Electrical / Optical Characteristics at T)=25°C
It em Forward
Voltage Reverse Current Junction Capacitance Peak Spectral Wavelength Spectral Bandwidth P/N F3 S F4 F3 S F4 F3 S F4 F3 S F4 F3 S F4 Sy m b o l VF IR C λP ∆λ Ty p . 1.2 1.3 90 90 9 40 880 50 50 Max . 1.5 1.7 10 10 Un it V uA pF nm nm Co n d it io n IF...