KU086N10F

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU086N10P KU086N10F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 100 V 20 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 95 50 60 32.5 400* 570 7.1 4.5 167 50 1.33 0.4 A mJ mJ V/ns W W/ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 ~ 150 Thermal Resistance, Junction-to-Case RthJC 0.75 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 2.5 /W /W K KU086N10P/F N-ch Trench MOS FET KU086N10P KU086N10F PIN CONNECTION 2011. 1. 20 Revision No : 0 1/7 KU086N10P/F ELECTRICAL CHARACTERISTICS (Tc=25 ) Static CHARACTERISTIC SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source O...