KTC9015

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌExcellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). ᴌLow Noise :NF=1dB(Typ.) at f=1kHz. ᴌComplementary to KTC9014. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -50 -50 -5 -150 150 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTC9015 EPITAXIAL PLANAR PNP TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (Note) VCE(sat) fT Cob VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, IE=0, f=1MHz Noise Figure NF VCE=-6V, IC=-0.1mA, Rg=10kή, f=1kHz Note : hFE Classification A:60ᴕ150, B:100ᴕ300, C:200ᴕ600 MIN. 60 60 - TYP. - -0.1 4.0 1.0 MAX. -50 -100 600 -0.3 7.0 10 UNIT nA nA V MHz pF dB 1994. 5. 11 Revision No : 0 1/1 ...