SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Excellent hFE Linearity. Compl...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Excellent hFE Linearity. Complementary to KTC9013SC.
KTC9012SC
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage Collector-Emitter
Voltage
VCBO VCEO
-40 -30
Emitter-Base
Voltage
VEBO
-5
Collector Current
IC -500
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT V V V mA mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) VBE(sat)
Transition Frequency
fT
TEST CONDITION IC=-0.05mA, IE=0 IC=-1mA, IB=0 IE=-0.05mA, IC=0 VCB=-35V, IE=0 VEB=-4V, IC=0 VCE=-1V, IC=-50mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-6V, IC=-20mA, f=30MHz
MIN. -50 -30 -8 200 150
TYP. -
MAX. -
-0.1 -0.1 300 -0.6 -1.2
-
UNIT V V V uA uA
V V MHz
2015. 5. 12
Revision No : 0
1/2
KTC9012SC
2015. 5. 12
Revision No : 0
2/2
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