SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES High Power Dissipation : PC=1.3W(Ta...
SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION
VOLTAGE LARGE CURRENT
FEATURES High Power Dissipation : PC=1.3W(Ta=25 ) Complementary to KTA1385D
KTC5103D
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current
DC Pulse *
VCBO VCEO VEBO
IC ICP
Base Current
IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW 10ms, Duty Cycle 50%
RATING 60 60 7 5 8 1 1.0 15 150
-55 150
UNIT V V V
A
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation
Voltage * Base-Emitter Saturation
Voltage *
ICBO IEBO hFE(1) hFE(2) (Note) hFE(3) VCE(sat) VBE(sat)
VCB=50V, IE=0 VEB=7V, IC=0 VCE=1V, IC=0.1A VCE=1V, IC=2A VCE=2V, IC=5A IC=2A, IB=0.2A IC=2A, IB=0.2A
Turn On Time
ton
Switching Time
Storage Time
tstg
Fall Time
tf
* Pulse test : PW 50 S, Duty Cycle 2% Pulse Note) hFE(2) Classification : O:160 320, Y:200 400.
2013. 6. 26
Revision No : 4
MIN. 60
160 50 -
-
TYP. 0.1 0.9
0.2
MAX. 10 10 400 0.3 1.2
UNIT A A
V V
1
- 1.1 2.5
S
- 0.2 1
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KTC5103D
2013. 6. 26
Revision No : 4
2/3
KTC5103D
2013. 6. 26
Revision No : 4
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