KTC3535T

SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. FEATURES ᴌAdoption of MBIT Processes. ᴌHigh Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌHigh Speed Switching. ᴌUltrasmall-Sized Package permitting applied sets to be made small and slim. ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTA1535T MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 20 Collector-Emitter Voltage VCEO 20 Emitter-Base Voltage VEBO 5 Collector Current DC Pulse IC ICP 3 5 Base Current IB 600 Collector Power Dissipation PC * 0.9 Junction Temperature Tj 150 Storage Temperature Range Tstg -55ᴕ150 * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) UNIT V V V A mA W ᴱ ᴱ C L A F GG KTC3535T EPITAXIAL PLANAR NPN TRANSISTOR E KB 23 1 D DIM A B C D E F G H I J K L MILLIMETERS 2.9 +_0.2 1.6+0.2/-0.1 0.70+_ 0.05 0.4+_ 0.1 2.8+0.2/-0.3 1.9+_ 0.2 0.95 0.16+_ 0.05...