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KTC3197 Datasheet

Part Number KTC3197
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet KTC3197 DatasheetKTC3197 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES ᴌHigh Gain : Gpe=33dB(Typ.) (f=45MHz). ᴌGood Linearity of hFE. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 30 25 4 50 -50 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTC3197 .

  KTC3197   KTC3197






Part Number KTC3197
Manufacturers SeCoS
Logo SeCoS
Description NPN Transistor
Datasheet KTC3197 DatasheetKTC3197 Datasheet (PDF)

Elektronische Bauelemente KTC3197 0.05A , 30V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Gain: Gpe=33dB(Typ.) (f=45MHz) Good Linearity of hFE TO-92 3 Base Collector 2 1Emitter 2Collector 3Base 1 Emitter REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25.

  KTC3197   KTC3197







EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES ᴌHigh Gain : Gpe=33dB(Typ.) (f=45MHz). ᴌGood Linearity of hFE. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 30 25 4 50 -50 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTC3197 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Saturation Voltage Collector-Emitter Base-Emitter Collector Output Capacitance Collector-Base Time Constant Transition Frequency ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) Cob Ccᴌrbb’ fT Power Gain (Fig.1) Gpe TEST CONDITION VCB=30V, IE=0 VEB=3V, IC=0 IC=10mA, IB=0 VCE=12.5V, IC=12.5mA IC=15mA, IB=1.5mA VCB=10V, IE=0, f=1MHz VCB=10V, IE=-1mA, f=30MHz VCE=12.5V, IC=12.5mA VCC=12.5V, IE=-12.5mA f=45MHz MIN. 25 20 0.8 - 300 28 TYP. - MAX. 0.1 0.1 200 0.2 1.5 2.0 25 36 UNIT ỌA V V pF pS MHz dB 1994. 6. 24 Revision No : 0 1/4 KTC3197 Fig. 1 45MHz Gpe TEST CIRCUIT 7pF INPUT 0..


2016-01-27 : KTC3197    BZT52H    BZT52H-B2V4    BZT52H-B2V7    BZT52H-B3V0    BZT52H-B3V3    BZT52H-B3V6    BZT52H-B3V9    BZT52H-B4V3    BZT52H-B4V7   


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