SEMICONDUCTOR
TECHNICAL DATA
KTC2025D/L
EPITAXIAL PLANAR NPN TRANSISTOR
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHIN...
SEMICONDUCTOR
TECHNICAL DATA
KTC2025D/L
EPITAXIAL PLANAR NPN TRANSISTOR
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES High breakdown
voltage VCEO 120V, high current 1A. Low saturation
voltage and good linearity of hFE. Complementary to KTA1045D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage
Collector Current
VCBO VCEO VEBO
IC ICP
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature Storage Temperature Range
Tj Tstg
RATING 120 120 5 1 2 1.0 8 150
-55 150
UNIT V V V
A
W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_ 0.2 1.10+_ 0.2 2.70+_ 0.2 2.30 +_ 0.1
1.00 MAX 2.30 +_ 0.2 0.5 +_ 0.1 2.00 +_ 0.20 0.50 +_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00 +_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2 E 9.50 +_ 0.6
F 2.30 +_ 0.1
G 0.76 +_ 0.1
H 1.0 MAX
I 2.30 +_ 0.2 J 0.5 +_ 0.1 L K 2.0 +_ 0.2 L 0.50 +_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage
DC Current Gain
Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation
Voltage Base-Emitter Saturation Volta...