SEMICONDUCTOR
TECHNICAL DATA
KTC2022D/L
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Col...
SEMICONDUCTOR
TECHNICAL DATA
KTC2022D/L
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector-Emitter Saturation
Voltage : VCE(sat)=-2.0V(Max.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current
Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
VCBO VCEO VCES VEBO
IC ICP IB PC Tj Tstg
130 100 130 8 5 10 0.5 20 150 -55 150
UNIT V V V V A A A W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1
1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0+_ 0.2
P
D 1.10+_ 0.2 E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2 J 0.5+_ 0.1 L K 2.0+_ 0.2 L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown
Voltage
DC Current Gain
Collector-Emitter Saturation
Voltage Base-Emitter
Voltage Transition Frequency Collector Output Capacitance
SYMBOL ICBO ICEO IEBO
V(BR)CEO hFE(1)
hFE(2)(Note) hFE(3) VCE(sat) VBE fT Cob
TEST CONDITION VCB=130V, IE=0 VCE=60V, IB=0 VEB=8V, IC=0 IC=50mA, IB=0 VCE=5...