isc Silicon NPN Power Transistor
KTC2020D
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 60V(Min) ·High Switching Sp...
isc Silicon NPN Power Transistor
KTC2020D
DESCRIPTION ·High Breakdown
Voltage-
: V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
60
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
7.0
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3.0
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage
IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage
IC= 2.0A; IB= 0.2A
VBE(on)
Base-Emitter On
Voltage
IC= 0.5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 60V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC= 0
hFE
DC current gain
IC= 0.5A ; VCE= 5V
hFE Classifications
Y
GR
100-200 150-300
KTC2020D
MIN MAX UNIT
60
V
1.0
V
1.0
V
100
μA
100
μA
100 300
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the appl...
