SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌLow Collector Saturation Voltage
: VCE(sat)=-1.0V(Ma...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌLow Collector Saturation
Voltage
: VCE(sat)=-1.0V(Max.) at IC=-3A, IB=-0.3A. ᴌCollector Power Dissipation
: PC=30W (Tc=25ᴱ). ᴌComplementary to KTD1351.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING -60 -60 -7 -3 -0.5 2.0 30 150
-55ᴕ150
UNIT V V V A A
W
ᴱ ᴱ
H
E Q
KTB988
EPITAXIAL PLANAR PNP TRANSISTOR
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A B
C
D E F G H
J K L M
N
O P Q R S T
MILLIMETERS 10.30 MAX
15.30 MAX
0.80 Φ3.60 +_ 0.20
3.00 6.70 MAX 13.60+_ 0.50
5.60 MAX
1.37 MAX 0.50
1.50 MAX 2.54
4.70 MAX
2.60
1.50 MAX
1.50 9.50+_ 0.20 8.00+_ 0.20 2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACT...
